| PART |
Description |
Maker |
| VIO125-12P1 VID125-12P1 VDI125-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| CM400DU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM50TF-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM150TU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM300DY-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM150E3U-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| VID160-12P1 VIO160-12P1 VDI160-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules in ECO-PAC 2
|
IXYS[IXYS Corporation]
|
| CM200DU-12H |
HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules: 600V
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM75DY-12H |
IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| SKM50GAL123D SKM50GB123D SKM50GB123D1 |
SEMITRANS? M IGBT Modules
SEMITRANS垄莽 M IGBT Modules
SEMITRANS㈢ M IGBT Modules
|
Semikron International
|
